App note: Failure signature of electrical overstress on power MOSFETs

Nexperia app note about MOSFET’s destruction investigative hints that can be used for design improvements. Link here (PDF)

When Power MOSFETs fail, there is often extensive damage. Examination of the size and location of the burn mark, the failure signature, provides information about the type of fault condition which caused the failure. This document provides a catalogue of failure signatures from common electrical overstress failure modes. The catalogue can be used in forensic investigation of the underlying root cause of failure to improve module design and reliability.

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