Another app note from IXYS on P-Channel power MOSFET application. Link here (PDF)
IXYS P-Channel Power MOSFETs retain all the features of comparable N-Channel Power MOSFETs such as very fast switching, voltage control, ease of paralleling and excellent temperature stability. These are designed for applications that require the convenience of reverse polarity operation. They have an n-type body region that provides lower resistivity in the body region and good avalanche characteristics because parasitic PNP transistor is less prone to turn-on. In comparison with Nchannel Power MOSFETs with similar design features, P-channel Power MOSFETs have better FBSOA (Forward Bias Safe Operating Area) and practically immune to Single Event Burnout phenomena. Main advantage of P-channel Power MOSFETs is the simplified gate driving technique in high-side (HS) switch position.
Guidelines for parallel operation of IGBT devices discuss in this app note from IXYS. Link here (PDF)
As applications for IGBT components have continued to expand rapidly, semiconductor manufacturers have responded by providing IGBTs in both discrete and modular packages to meet the needs of their customers. Discrete IGBTs span the voltage range of 250V to 1400V and are available up to 75A (DC), which is the maximum current limit for both the TO-247 and TO-264 terminals. IGBT modules cover the same voltage range but, due to their construction, can control currents up to 1000A today. However, on an Ampere per dollar basis, the IGBT module is more expensive so that for cost-sensitive applications, e.g. welding, low voltage motor control, small UPS, etc., designs engineers would like to parallel discrete IGBT devices.
This application note from SiTime gives practical guidelines for the effective probing of oscillator output, shows common mistakes and explains how to identify and avoid potential probing issues. Link here (PDF)
Electrical engineers often use oscilloscopes for purposes ranging from checking simple, lowspeed digital signals to accurate waveform and jitter measurements. They need to use probes to directly access arbitrary signals on a PCB. Probes can, however, put extra load on a signal or distort the waveform displayed on a scope. Therefore, probing should be done carefully.
App note from SiTime about Voltage controled crystal oscillator (VCXO) specification, Link here (PDF)
VCXO are frequency control devices that allow change of output frequency as their input voltage varies. In selecting a VCXO for any application, a number of device performance specifications must be considered. This application note attempts to clarify the key VCXOspecific performance specifications, and to illustrate some of the tradeoffs associated with using a VCXO in an application.
Silicon Lab’s basics of USB Human interface device (HID) and how this class communicate to PCs. Link here (PDF)
The Human Interface Device (HID) class specification allows designers to create USB-based devices and applications without the need for custom driver development.
Application circuit of supercapacitor ENYCAP(TM) power management from Vishay. Link here (PDF)
The MAL219699001E3 demonstration circuit is a fully transparent power management solution with a regulated 2 W output and integrated power backup. It provides a DC/DC regulator with a wide power input range from 4.0 V to 20 V and adjustable regulated output between 3.3 V and 5.0 V.