App note from ON Semiconductors about the need for long cables for high speed Type-C and Type-A connectors. Link here (PDF)
With the increasing requirement for high speed transfer of larger bulk of data, better quality video and power delivery, change over from analog to digital videos, bi−directional transfers, it become essential to use a proper cable that delivers the data correctly between external hard drives and other systems or end products.
The use of Active cable becomes a necessity with increase in cable lengths of more than 5 meters, number of ports and data rates 10 Gbps and above. To match these using passive cables will become expensive with increased weight and thickness.
App note from ON Semiconductors on their various reference designs on automotive regulator topologies. Link here (PDF)
ON Semiconductor provides several reference designs for automotive synchronous buck pre−regulators covering a broad range of applications such as ADAS, cluster, body and infotainment.
App note from ON Semiconductors comparing the performance between SiC MOSFET and Silicon IGBT in a similar and compatible power modules. Link here (PDF)
This application note compares the performance of two power integrated modules (PIMs) in the boost stage of an 1100 V solar inverter. One PIM used state−of−the−art silicon 1200 V IGBT (part number NXH100B120H3Q0) defined as PIM−IGBT and the other PIM used a new 1200 V SiC MOSFET (part number NXH40B120MNQ0) defined as PIM−SIC. These two PIMs utilized the same Q0 package technology and SiC Schottky boost diode. They are pin−to−pin compatible allowing customers to upgrade from Si IGBT to the SiC MOSFET version. Due to faster switching characteristics of the SiC device, this paper explains gate driver and PCB layout topics which must be considered when using fast switching devices like SiC MOSFETs.
App note from ON Semiconductors on their SiC MOSFET’s key characteristics and how to drive them. Link here (PDF)
Silicon carbide (SiC) is part of the wide bandgap (WBG) family of semiconductor materials used to fabricate discrete power semiconductors. Conventional silicon (Si) MOSFETs have a bandgap energy of 1.12 eV compared to SiC MOSFETs possessing 3.26 eV.
The wider bandgap energy associated with SiC and (GaN) Gallium Nitride means that it takes approximately 3 times the energy to move electrons from their valence band to the conduction band, resulting in a material that behaves more like an insulator and less like a conductor. This allows WBG semiconductors to withstand much higher breakdown voltages, highlighted by their breakdown field robustness being 10 times that of silicon. A higher breakdown field enables a reduction in device thickness for a given voltage rating which translates to lower on−resistance and higher current capability.
App note from ON Semiconductors about less common transistors stresses when used on switching power supplies. Link here (PDF)
The power transistor, in today’s switching power supply, exists in an environment which is quite hostile to semiconductors. Large currents, large voltages, high temperature, high frequency, and low impedance sources add up to something close to the worst of all possible worlds for the transistor.
Given this type of environment, it is not surprising to find that keeping transistor stresses within acceptable limits can be quite a challenge. Transistors designed and specified specifically for switching power supplies help, but do not in themselves guarantee a reliable design. Very often, reliability is determined by the more subtle aspects of how stress imposed by the power supply relates to transistor safe operating area.
Fairly old app note from ON Semiconductors on using capacitors to drive LEDs off AC mains. Link here (PDF)
This application note describes the basics for powering high current light emitting diodes (LEDs) utilizing a capacitive divider circuit off the AC mains. A linear regulator is used to control the LED current in order to ensure optimal performance and long life. LED characteristics are explained, followed by an example design to illustrate the concept.