Tag Archives: ON Semiconductors

App note: Introduction to the silicon photomultiplier (SiPM)

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App note from ON Semiconductors about SiPM sensors, explaining the working principle and primary performance parameters. Link here (PDF)

The Silicon Photomultiplier (SiPM) is a sensor that addresses the challenge of sensing, timing and quantifying low-light signals down to the single-photon level. Traditionally the province of the Photomultiplier Tube (PMT), the Silicon Photomultiplier now offers a highly attractive alternative that combines the low-light detection capabilities of the PMT while offering all the benefits of a solid-state sensor. The SiPM features low-voltage operation, insensitivity to magnetic fields, mechanical robustness and excellent uniformity of response. Due to these traits, the SensL® SiPM has rapidly gained a proven performance in the fields of medical imaging, hazard and threat detection, biophotonics, high energy physics and LiDAR.

App note: How to maintain USB signal integrity when adding ESD protection

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Introducing the eye diagram method in this app note from ON Semiconductors in determining signal integrity of USB lines. Link here (PDF)

The Universal Serial Bus (USB) has become a popular feature of PCs, cell phones and other electronic devices. USB makes data transfer between electronic devices faster and easier. USB 2.0 transfers data at up to 480 Mbps. At these data rates, any small amount of capacitance added will cause disturbances to the data signals. Designers are left with the challenge of finding ESD protection solutions that can protect these sensitive lines without adding signal degrading capacitance. This document will discuss USB 2.0 and evaluate the importance of low capacitance ESD protection devices with the use of eye diagrams.

App note: Low-side self-protected MOSFET

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Integrated fault protected MOSFET app note from ON Semiconductors. Link here (PDF)

The ever increasing density and complexity of automotive and industrial control electronics requires integration of components, wherever possible, so as to conserve space, reduce cost, and improve reliability. Integration of protection features with power switches continues to drive new product development. The often open environments of automotive and industrial electronics, subject to severe voltage transients, high power and high inductance loads, numerous external connections, and human intervention force the requirement of fault protection circuitry. Advancements in power MOSFET processing technology afford an economical marriage of protection features, such as current limitation, and standard MOSFET power transistor switches. This paper describes the technology and operation of ON Semiconductor’s HDPlus monolithic low-side smart MOSFET family.

App note: Hot plug insertion startup time delay for eFuse

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App note from ON semiconductors about time delay on start up in conjunction with eFuse to compensate voltage spikes that can falsely trigger them. Link here (PDF)

The eFuse protection devices are used for limiting the system load current in the event of an overload or a short circuit. Many applications employ ON Semiconductor eFuses at the power input stage of the system between the main power input connector and DC−DC converters or power regulators. Such applications often tend to experience a voltage spikes and transients during a hot-plug events, especially when the long cables are used at the power input.

Although ON Semiconductor eFuses are extremely immune to voltage transients and eFuses with the Overvoltage clamp feature provide a fast response when limiting the output voltage during transients, sometimes various applications require a time delay between the hot-plug input voltage application and enabling of the eFuse in order for the input voltage to be stabilized before turning on the eFuse.

App note: The four benefits brought by using NCP12600

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App note discussing extended features of NCP12600, NCP12600 is a multi-mode controller for offline power supplies by ON Semiconductor. Link here (PDF)

Beside the novel multi−mode structure it embarks, the NCP12600 packs a lot of features such as an efficient short−circuit protection architecture, a start−up sequence with a slow switching frequency ramp−up, a fast reset when latched and an auto−recovery scheme when line cycle dropout occurs in latched versions. Let’s discover these novelties in the present application note.

App note: Application of SiC MOSFETs

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App note from ON Semiconductors about Silicon Carbide MOSFETs, their difference and gains over Silicon MOSFETs. Link here (PDF)

Among the Wide Band Gap materials silicon carbide (SiC) is by far the most mature one. The raw wafer quality has greatly improved over the last years with significant reduction of micro pipes and dislocations. Silicon carbide devices can work at high temperatures, are very robust and offer both low conduction and switching losses. The high thermal conductivity makes SiC also a perfect choice for high power applications, when good cooling is required. Compared to silicon switches, silicon carbide MOSFETs inherit some specific characteristics like the shift of gate threshold a designer should be aware of. This effect will be explained in this application note.