Tag Archives: ON Semiconductors

App note: Battery Fuel Gauging LSI [Smart LiB Gauge] for 1-Cell Lithium-ion/Polymer with LC709204F

via Dangerous Prototypes

App note from ON Semiconductor on their Smart Fuel gauge LC709204F. Link here (PDF)

LC709204F is a Fuel Gauge for 1−Cell Lithium−ion/ Polymer batteries. It is a part of our Smart LiB Gauge family of Fuel Gauges which measure the battery RSOC (Relative State Of Charge) using its unique algorithm called HG−CVR2. The HG−CVR2 algorithm provides accurate RSOC information even under unstable conditions (e.g. changes of battery; temperature, loading, aging and self−discharge).

App note: Paralleling eFuses

via Dangerous Prototypes

ON Semiconductors guide to cover much higher current capacity from eFuses. Link here (PDF)

The standard 12 V, 5 V and 3.3 V electronic fuses from ON Semiconductor provide overcurrent and overvoltage protection and come in different current limit configurations. As an example, the 5 V NIS5452 eFuse has a recommended operational 5 A current limit. Sometimes the operating current for the user system might be much higher than the maximum allowed current limit provided by the eFuse.

App note: How to prevent thermal issues with high output current DC to DC converters in portable applications

via Dangerous Prototypes

Tips and tricks from ON Semiconductors on how to optimize high output current switching regulators thermal dissipation. Link here (PDF)

As power demand in portable designs is more and more important, designers must optimize full system efficiency in order to save battery life and reduce power dissipation. Energy losses study allows knowing thermal stakes. Due to integration and miniaturization, junction temperature can increase significantly which could lead to bad application behaviors or in worst case to reduce components reliability.

App note: Hot plug insertion startup time delay for eFuse

via Dangerous Prototypes


App note from ON semiconductors about time delay on start up in conjunction with eFuse to compensate voltage spikes that can falsely trigger them. Link here (PDF)

The eFuse protection devices are used for limiting the system load current in the event of an overload or a short circuit. Many applications employ ON Semiconductor eFuses at the power input stage of the system between the main power input connector and DC−DC converters or power regulators. Such applications often tend to experience a voltage spikes and transients during a hot-plug events, especially when the long cables are used at the power input.

Although ON Semiconductor eFuses are extremely immune to voltage transients and eFuses with the Overvoltage clamp feature provide a fast response when limiting the output voltage during transients, sometimes various applications require a time delay between the hot-plug input voltage application and enabling of the eFuse in order for the input voltage to be stabilized before turning on the eFuse.

App note: The four benefits brought by using NCP12600

via Dangerous Prototypes


App note discussing extended features of NCP12600, NCP12600 is a multi-mode controller for offline power supplies by ON Semiconductor. Link here (PDF)

Beside the novel multi−mode structure it embarks, the NCP12600 packs a lot of features such as an efficient short−circuit protection architecture, a start−up sequence with a slow switching frequency ramp−up, a fast reset when latched and an auto−recovery scheme when line cycle dropout occurs in latched versions. Let’s discover these novelties in the present application note.

App note: Application of SiC MOSFETs

via Dangerous Prototypes


App note from ON Semiconductors about Silicon Carbide MOSFETs, their difference and gains over Silicon MOSFETs. Link here (PDF)

Among the Wide Band Gap materials silicon carbide (SiC) is by far the most mature one. The raw wafer quality has greatly improved over the last years with significant reduction of micro pipes and dislocations. Silicon carbide devices can work at high temperatures, are very robust and offer both low conduction and switching losses. The high thermal conductivity makes SiC also a perfect choice for high power applications, when good cooling is required. Compared to silicon switches, silicon carbide MOSFETs inherit some specific characteristics like the shift of gate threshold a designer should be aware of. This effect will be explained in this application note.