App note from ON Semiconductors about the need for long cables for high speed Type-C and Type-A connectors. Link here (PDF)
With the increasing requirement for high speed transfer of larger bulk of data, better quality video and power delivery, change over from analog to digital videos, bi−directional transfers, it become essential to use a proper cable that delivers the data correctly between external hard drives and other systems or end products.
The use of Active cable becomes a necessity with increase in cable lengths of more than 5 meters, number of ports and data rates 10 Gbps and above. To match these using passive cables will become expensive with increased weight and thickness.
App note from ON Semiconductors on their various reference designs on automotive regulator topologies. Link here (PDF)
ON Semiconductor provides several reference designs for automotive synchronous buck pre−regulators covering a broad range of applications such as ADAS, cluster, body and infotainment.
App note from Diodes Incorporated on their SBR technology which can supports ISO standard supply protection. Link here (PDF)
Electrical disturbances in an automotive environment present reliability and functional risks to the various electronic systems and components that may be exposed. Many modules, for example electronic control units (ECUs), have sensitive microcontrollers at their core and must be shielded to ensure reliable operation. High-voltage transient conduction can be introduced along supply lines by many sources including: ignition systems, inductive components, unexpected conditions such as faults, and connection/disconnection of loads. Depending on the severity these can cause anything from system malfunctions to irreparable component damage.
App note from Diodes Incorporated on their AL8860Q LED driver with built-in faults protection. Link here (PDF)
The AL8860Q is a hysteresis mode DC-DC buck LED driver, designed for driving single or multiple series connected LEDs in automotive lamps. In some circumstances the LED string should become in fault status such as open-circuit, short-circuit, LED string anode shorted to GND, which may result in damage to the system and battery. For safety and reliability, the total solution in automotive LED lighting application must take these fault conditions in consideration.
App note from ON Semiconductors comparing the performance between SiC MOSFET and Silicon IGBT in a similar and compatible power modules. Link here (PDF)
This application note compares the performance of two power integrated modules (PIMs) in the boost stage of an 1100 V solar inverter. One PIM used state−of−the−art silicon 1200 V IGBT (part number NXH100B120H3Q0) defined as PIM−IGBT and the other PIM used a new 1200 V SiC MOSFET (part number NXH40B120MNQ0) defined as PIM−SIC. These two PIMs utilized the same Q0 package technology and SiC Schottky boost diode. They are pin−to−pin compatible allowing customers to upgrade from Si IGBT to the SiC MOSFET version. Due to faster switching characteristics of the SiC device, this paper explains gate driver and PCB layout topics which must be considered when using fast switching devices like SiC MOSFETs.
App note from ON Semiconductors on their SiC MOSFET’s key characteristics and how to drive them. Link here (PDF)
Silicon carbide (SiC) is part of the wide bandgap (WBG) family of semiconductor materials used to fabricate discrete power semiconductors. Conventional silicon (Si) MOSFETs have a bandgap energy of 1.12 eV compared to SiC MOSFETs possessing 3.26 eV.
The wider bandgap energy associated with SiC and (GaN) Gallium Nitride means that it takes approximately 3 times the energy to move electrons from their valence band to the conduction band, resulting in a material that behaves more like an insulator and less like a conductor. This allows WBG semiconductors to withstand much higher breakdown voltages, highlighted by their breakdown field robustness being 10 times that of silicon. A higher breakdown field enables a reduction in device thickness for a given voltage rating which translates to lower on−resistance and higher current capability.